Micro LED yog hais txog lub tshuab siv micron- nplai LEDs li lub teeb- tawm pixel units thiab sib sau ua ke nrog cov tsav tsheb los ua ib qho siab -cov zaub array. Piv nrog rau tam sim no cov khoom siv thev naus laus zis xws li LCD thiab OLED, Micro LED tau hla -cov txiaj ntsig zoo nyob rau hauv cov nqe lus ntawm kev ci ntsa iab, kev daws teeb meem, kev siv hluav taws xob, kev pab lub neej, kev teb ceev thiab thermal stability, thiab yog ib qho kev lees paub thoob ntiaj teb rau yav tom ntej zaub. tshuab.
Txawm li cas los xij, kev lag luam ntawm Micro LED tseem ntsib ntau yam teeb meem. Ua ntej, nws yog qhov nyuaj kom phim cov kev xav tau ntawm kev tsav tsheb ntawm siab -cov khoom siv ceev ceev hauv qhov me me. Thib ob, kev hloov pauv huab cua nrov hauv kev lag luam yog qhov nyuaj kom ua tau raws li kev xav tau ntawm kev loj hlob ntawm siab - kev daws teeb meem qhia txog tus nqi thiab cov txiaj ntsig. Tshwj xeeb tshaj yog rau cov ntawv thov kev daws teeb meem ultra- siab- xws li AR / VR, tsis tsuas yog qhov kev daws teeb meem yuav tsum tau tshaj 3000PPI, tab sis kuj tseem cov pixels yuav tsum muaj cov lus teb sai dua.
Professor Zhang Rong of Xiamen Future Display Technology Research Institute cooperated with Nanjing University, Southeast University, Tianma Microelectronics Co., Ltd. and other units to propose a super-resolution Micro LED display technology solution based on MoS₂ thin film transistor driver circuit and monolithic integration.
The team developed a non-"massive transfer" low-temperature monolithic heterogeneous integration technology, using a nearly non-destructive large-scale two-dimensional semiconductor TFT manufacturing process to achieve a 3232 array of 1270 PPI high-brightness, high-resolution microdisplays, It can meet future cross-field applications such as micro display, vehicle display, and visible light communication.
Among them, compared with the traditional two-dimensional semiconductor device process, the new process developed by the team improves the performance of thin film transistors by more than 200 percent , reduces the difference by 67 percent , and the maximum driving current exceeds 200μA/μm, which is superior to IGZO, LTPS and other commercial materials. Show The huge application potential of two-dimensional semiconductor materials in the display driving industry is revealed.
Peb -dimensional monolithic micro-LED cov lus uas tau tsav los ntawm matrix ntawm atomically nyias transistors
The research results are written in the article "Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix" and published in Nature Nanotechnology on September 9, 2021 (corresponding authors are Professor Wang Xinran, Professor Liu Bin, Professor Shi Yi and Professor Zhang Rong ).
Qhov no yog thawj zaug hauv ntiaj teb uas ob lub thev naus laus zis tshiab ntawm kev ua haujlwm siab -kev ua tau zoo ob-dimensional semiconductor TFT thiab Micro LED tau koom ua ke, muab txoj hauv kev tshiab rau kev txhim kho yav tom ntej ntawm Micro LED zaub technology .
