Two-dimensional semiconductor materials, represented by transition metal dichalcogenides (TMDCs), have the characteristics of extreme thickness, high mobility, and back-end heterogeneous integration. They are expected to continue Moore's law and realize integrated circuits with three-dimensional architecture. and industry attention. After nearly a decade of development, two-dimensional electronics has made great progress, but there are still challenges in the preparation of large-area single crystals, key device processes, and compatibility with mainstream semiconductor technologies.
Pawg tshawb fawb ntawm Prof. Xinran Wang los ntawm Lub Tsev Kawm Ntawv ntawm Hluav Taws Xob Science thiab Engineering ntawm Nanjing University tau tsom mus rau cov teeb meem saum toj no thiab tshawb fawb txog kev ua tiav hauv cov thev naus laus zis tseem ceeb ntawm ob -dimensional semiconductor single crystal fabrication thiab hetero- kev koom ua ke, uas tau muab cov tswv yim tshiab rau kev txhim kho ntawm kev sib koom ua ke hauv kev tshaj tawm -Moore era. Cov txiaj ntsig kev tshawb fawb ntsig txog tau tshaj tawm hauv Nature Nanotechnology tsis ntev los no.
Building "atomic terraces" down-to-earth, breaking through two-dimensional semiconductor single crystal epitaxy
Semiconductor ib leeg siv lead ua cov ntaub ntawv yog lub hauv paus ntawm microelectronics kev lag luam. Piv nrog rau lub ntsiab 12-inch monocrystalline silicon wafers, kev npaj ntawm ob-dimensional semiconductors tseem nyob rau hauv me me- nplai thiab polycrystalline theem. Txoj kev loj hlob ntawm - cheeb tsam loj, siab - zoo monocrystalline nyias zaj duab xis yog thawj kauj ruam ntawm ob- qhov sib txuas sib txuas. . Txawm li cas los xij, thaum lub sij hawm kev loj hlob ntawm ob- cov ntaub ntawv loj, ntau lab ntawm cov microscopic chips yog randomly generated, thiab nws tsuas yog ua tau kom tau ib tug monolithic ib leeg-crystal cov ntaub ntawv los ntawm kev tswj tag nrho cov chips kom muaj ib tug nruj me ntsis kev taw qhia.
Sapphire is a widely used substrate in the semiconductor industry and has outstanding advantages in mass production, low cost and process compatibility. The collaborating team proposed a scheme to artificially construct atomic-scale "terraces" by changing the direction of the atomic steps on the sapphire surface. The directional growth of TMDCs was achieved by the directional induced nucleation mechanism of "atomic terraces".
Based on this principle, the team achieved the epitaxial growth of a 2-inch MoS2 single crystal film for the first time in the world. Thanks to the improvement of material quality, the mobility of field effect transistors based on MoS2 single crystal is as high as 102.6 cm2/Vs, and the current density reaches 450 μA/μm, which is one of the highest comprehensive performances reported internationally. At the same time, the technology has good universality and is suitable for the preparation of single crystals of other materials such as MoSe2. This work has laid a material foundation for the application of TMDC in the field of integrated circuits.
Saib ntawm lub hnub qub, ob-seem ceeb ntawm semiconductors coj lub teeb rau yav tom ntej siv thev naus laus zis
Kev tawg ntawm loj- cheeb tsam ib leeg- cov ntaub ntawv siv lead ua ua rau nws ua tau rau ob -sem teeb semiconductors siv. Nyob rau hauv qhov thib ob ua hauj lwm, raws li nyob rau hauv ntau xyoo ntawm tsub zuj zuj ntawm peb - tiam semiconductor kev tshawb fawb, ua ke nrog qhov tseeb ob-dimensional semiconductor ib leeg siv lead ua kua, pab neeg koom tes ntawm lub tsev kawm ntawv ntawm Electronics npaj ib tug monolithic integrated ultra -siab- daws teeb meem Micro LED zaub raws li MoS2 nyias zaj duab xis transistor tsav tsheb Circuit Court. Kev daws teeb meem.
Micro LED yog hais txog lub tshuab siv micron- nplai LEDs li lub teeb- tawm pixel units thiab sib sau ua ke nrog cov tsav tsheb los ua ib qho siab -cov zaub array. Piv nrog rau tam sim no cov khoom siv thev naus laus zis xws li LCD thiab OLED, Micro LED tau hla -cov txiaj ntsig zoo nyob rau hauv cov nqe lus ntawm kev ci ntsa iab, kev daws teeb meem, kev siv hluav taws xob, kev pab lub neej, kev teb ceev thiab thermal stability, thiab yog kev lees paub thoob ntiaj teb tom ntej{ {4}} tiam tso saib technology.
Txawm li cas los xij, kev lag luam ntawm Micro LED tseem ntsib ntau yam teeb meem. Ua ntej, nws yog qhov nyuaj kom phim cov kev xav tau ntawm kev tsav tsheb ntawm siab -cov khoom siv ceev ceev hauv qhov me me. Thib ob, kev hloov pauv huab cua nrov hauv kev lag luam yog qhov nyuaj kom ua tau raws li kev xav tau ntawm kev loj hlob ntawm siab - kev daws teeb meem qhia txog tus nqi thiab cov txiaj ntsig. Tshwj xeeb tshaj yog rau cov ntawv thov kev daws teeb meem ultra- siab- xws li AR / VR, tsis tsuas yog qhov kev daws teeb meem yuav tsum tau tshaj 3000PPI, tab sis kuj tseem cov pixels yuav tsum muaj cov lus teb sai dua.
The cooperative team aimed at the field of high-resolution micro-display, and proposed a technical solution for the 3D monolithic integration of MoS2 thin-film transistor driver circuit and GaN-based Micro LED display chip. The team developed a non-"massive transfer" low-temperature monolithic heterogeneous integration technology, using a nearly non-destructive large-size two-dimensional semiconductor TFT manufacturing process, to achieve a high-brightness, high-resolution microdisplay of 1270 PPI, which can meet the needs of future microdisplays. Display, vehicle display, visible light communication and other cross-field applications.
Among them, compared with the traditional two-dimensional semiconductor device process, the new process developed by the team improves the performance of thin film transistors by more than 200 percent , reduces the difference by 67 percent , and the maximum driving current exceeds 200 μA/μm, which is better than IGZO, LTPS and other commercial materials. It shows the huge application potential of two-dimensional semiconductor materials in the display driving industry. This work is the first in the world to integrate two emerging technologies of high-performance two-dimensional semiconductor TFT and Micro LED, which provides a new technical route for the future development of Micro LED display technology.
The above works are respectively named "Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire" (corresponding authors are Prof. Wang Xinran and Prof. Wang Jinlan of Southeast University) and "Three dimensional monolithic Micro LED display driven by atomically-thin transistor matrix" (corresponding authors). It was published online in Nature Nanotechnology recently.
This series of work has been supported by projects such as Jiangsu Province's Frontier Leading Technology Basic Research Project, the National Natural Science Foundation of China, and the National Key RD Program. Changchun Institute of Optics and Mechanics, Chinese Academy of Sciences, Tianma Microelectronics Co., Ltd., Nanjing Huanxuan Semiconductor Co., Ltd., etc.
